| 二氧化锡／多孔硅／硅的吸附特性 |
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| 引用本文： | 谢廷贵 王余美. 二氧化锡／多孔硅／硅的吸附特性[J]. 厦门大学学报(自然科学版), 1995, 34(5): 707-710 |
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| 作者姓名： | 谢廷贵 王余美 |
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| 作者单位： | Dept.of Phys.，Dept.of Electr. Eng. |
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| 基金项目： | 国家和福建省自然科学基金 |
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| 摘 要： | 研究了二氧化锡／多孔硅／硅（ＳｎＯ＿２／ＰＳ／Ｓｉ）的光伏谱和吸附性质，由分析光伏谱得出在ＳｎＯ＿２／ＰＳ／Ｓｉ之间存在着二个异质结：一个是ＳｎＯ＿２／ＰＳ异质结；另一个是ＰＳ／Ｓｉ异质结，当样品吸附ＣＯ气体后，光电压明显减少，实验结果表明，利用光电压的变化可以检测ＣＯ等有害气体．本文对新气体敏感材料ＳｎＯ＿２／ＰＳ／Ｓｉ的有关气体吸附机制进行了讨论．
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| 关 键 词： | 多孔硅，半导体异质结，吸附 |
Adsorption Properties of Tin Oxide/Porous Silicon/Silicon |
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| Shen Qihua,Xie Tingui,Wang Yujiang ,Cai Yushuang. Adsorption Properties of Tin Oxide/Porous Silicon/Silicon[J]. Journal of Xiamen University(Natural Science), 1995, 34(5): 707-710 |
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| Authors: | Shen Qihua Xie Tingui Wang Yujiang Cai Yushuang |
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| Abstract: | The Photovoltage spectra and the adsorption properties of tin oxide/poroussilicon/Silicon(SnO_2/PS/Si) have been studied. The photovoltage spectra show that there existtwo heterojunctions in SnO_2/PS/Si structure. One is the heterojunction of SnO_2/PS. The other isthe heterojunction of PS/Si. The photovoltage decrease evidently when the sample adsorb CO.The experimental results show that the harmful gas. such as CO, can be detected through thevariation of photovoltage. The CO adsorption mechanism of the new gas-sensitive material SnO_2/PS/Si is discussed. |
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| Keywords: | Porous silicon Semiconductor heterojunction Adsorption |
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