低阻硅TSV高温工艺中的热力学分析

针对低阻硅TSV热力学研究的空白做出了相应的仿真分析.首先介绍了低阻硅TSV转接层的加工工艺,接着基于实验尺寸,在350℃工艺温度下,模拟了低阻硅TSV的涨出高度及应力分布.不同于铜基TSV,低阻硅TSV的涨出区域主要集中在聚合物绝缘层的上方.为了减小低阻硅TSV的涨出高度及热应力,分别对工艺温度、表面SiO₂厚度、低阻硅TSV的直径、高度、间距和BCB绝缘层厚度进行了变参分析.结果表明,减小BCB绝缘层的厚度及高度以及增加表面SiO₂厚度是抑制低阻硅TSV膨胀高度及减小热应力的有效方法. 

Thermal-Mechanical Analysis of Low Resistivity Silicon Through Silicon Via (TSV) During High Temperature Process

This paper focuses on thermal mechanical analysis of low resistivity silicon through silicon via (LRS-TSV),since there are few researches on it.Firstly,the process flow for LRS-TSV based interposer was introduced.Then based on experimental dimension of LRS-TSV,protrusion height and thermal stress of LRS-TSV were simulated under 350℃.The simulation result shows that,compared with copper based TSV,protrusion area of LRS-TSV are mainly upon polymer insulation.To decrease protrusion height and thermal stress of LRS-TSV,factors such as process temperature,thickness of top SiO2 layer,LRS-TSV diameter,height,space and thickness of insulation were investigated respectively.From results,it shows that decreasing the thickness and height of insulation,increasing thickness of top SiO2 layer are effective solutions to reduce the protrusion height and release thermal stress.