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Au/BaTiO3/SrRuO3异质结的制备与电致电阻效应研究
引用本文:褚慧芳,梁坤,马志军,章天金,吴冰,杨超.Au/BaTiO3/SrRuO3异质结的制备与电致电阻效应研究[J].湖北大学学报(自然科学版),2014,36(6):560-563.
作者姓名:褚慧芳  梁坤  马志军  章天金  吴冰  杨超
作者单位:湖北大学材料科学与工程学院,湖北武汉,430062
基金项目:国家自然科学基金,湖北省自然科学基金,湖北省教育厅青年项目
摘    要:异质结的高低阻态可以分别代表逻辑"0"和"1",从而实现二进制数据存储.采用磁控溅射法制备Au/BaTiO3/SrRuO3异质结.研究结果表明在不同工艺条件下制备的BaTiO3薄膜均具有(002)择优取向.电学测试表明:在较低气压下制备的薄膜,异质结中可以实现可逆的单极性到双极性电阻转变;在较高气压下制备的薄膜,异质结中可以实现不可逆的非对称双极性电阻转变.这些实验结果可以用界面调制的随机断路器网络模型统一解释.

关 键 词:钛酸钡  异质结  电致电阻效应

The fabrication and electroresistance effect studies of Au/BaTiO3/SrRuO3 heterojunctions
CHU Huifang,LIANG Kun,MA Zhijun,ZHANG Tianjin,WU Bing,YANG Chao.The fabrication and electroresistance effect studies of Au/BaTiO3/SrRuO3 heterojunctions[J].Journal of Hubei University(Natural Science Edition),2014,36(6):560-563.
Authors:CHU Huifang  LIANG Kun  MA Zhijun  ZHANG Tianjin  WU Bing  YANG Chao
Institution:CHU Huifang;LIANG Kun;MA Zhijun;ZHANG Tianjin;WU Bing;YANG Chao;School of Materials Science and Engineering,Hubei University;
Abstract:The high and low resistance state of heterojunction can represent logic "0" and "1",thereby enabling the storage of binary data.The Au/BaTiO3/SrRuO3 heterogenous junctions were fabricated by magnetron sputtering.Our study shows that the BaTiO3 thin films are grown along the(002)preferred orientation under different technological conditions.The Au/BaTiO3/SrRuO3 heterojunctions show reversible conversion from unipolar to bipolar resistance switching under low pressure and irreversible asymmetric bipolar resistance switching under relatively high pressure.These results can be universally explained by the interface-modified random circuit breaker network model.
Keywords:BaTiO3 thin films  heterojunction  electroresistance effect
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