SiC材料发光性能表征综述

本文从SiC材料发光性能表征方法出发，介绍了光致发光、阴极荧光和离子激发发光三种光学测量方法．不同发光表征技术适用研究材料不同的品质特征，光致发光是一种无损检测，阴极荧光对SiC外延层的位错缺陷具有更好的测量效果，离子激发发光可以观测缺陷发光的原位信息．发光变化与材料中的缺陷中心相关，因而光学测量可以很好地反映材料内部特征．通过不同光学测量方法研究SiC材料的发光性能，为更好地拓展SiC发光应用奠定了重要基础． 

Characterizing luminescent properties of SiC materials

In this paper, there are three optical measurement methods, photoluminescence, cathodoluminescence and ion-excited luminescence, are introduced based on the characterization methods of luminescence properties of SiC materials. Different luminescence characterization techniques are applicable for studying different quality characteristics, among which photoluminescence is a non-destructive test, cathodoluminescence has better measurement efficiency on dislocation defects of SiC epitaxial layer, ion excitation luminescence can detect the in-situ information of defect luminescence; the change of luminescence is related to the defect center in the material, so optical measurement can well reflect the interior features of the material. The luminescence properties of SiC materials were studied by different optical measurement methods, which laid an important foundation for better expanding the application of SiC luminescence.