| CCD成像器件的不均匀性测试 |
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| 引用本文： | 吴裕斌,曹丹华.CCD成像器件的不均匀性测试[J].华中科技大学学报(自然科学版),1998(8). |
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| 作者姓名： | 吴裕斌 曹丹华 |
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| 作者单位： | 华中理工大学光电子工程系 |
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| 摘 要： | 从理论上分析了CCD暗电流和响应率不均匀性产生的原因，指出了在一定条件下可通过定标的方法减小CCD不均匀性对测量结果的影响．给出了测量CCD暗电流的方法及利用光点注入法测量CCD响应率不均匀性的方法，并通过实验系统验证了这种方法是可行的．
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| 关 键 词： | 电荷耦合器件 光电特性 不均匀性 测试 |
Testing of Non-uniformity of Charge-Coupled Image Devices |
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| Wu Yubin, Cao Danhua.Testing of Non-uniformity of Charge-Coupled Image Devices[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1998(8). |
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| Authors: | Wu Yubin Cao Danhua |
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| Institution: | Wu Yubin; Cao Danhua |
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| Abstract: | The causes of non-uniformity of dark current and optoelectrical response of charge-coupleddevice (CCD) is theoretically analyzed. The method to test dark current and the light spot injectingmethod to test the non-uniformity of response are given. All these methods are proved to be effectiveby experiments. It is also found in experiments that the dark current under normal temperature is verysmall, while the non-uniformity of response is relatively significant, but it almost does not changewith temperature. The non-uniformity of CCD appears mainly as non-uniformity of response undernormal and low temperature. By testing the non-uniformity first with the method discussed and thencorrecting the output of each photo element, the non-uniformity of CCD can be compensated to 1%. |
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| Keywords: | charge-coupled device optoelectrical characteristics non-uniformity testing |
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