| 含纳米硅粒SiO2薄膜的光致发光 |
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| 引用本文： | 林赏心,郭亨群. 含纳米硅粒SiO2薄膜的光致发光[J]. 华侨大学学报(自然科学版), 2006, 27(1): 35-38 |
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| 作者姓名： | 林赏心 郭亨群 |
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| 作者单位： | 华侨大学信息科学与工程学院,福建,泉州,362021 |
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| 摘 要： | 采用RF磁控溅射技术制备含纳米硅的SiO2薄膜.通过对Si-SiO2复合靶的比分进行调节控制,并在不同的温度下进行高温退火得到不同粒径的纳米硅.利用XRD对样品进行分析得出纳米硅的平均粒径;对样品测量光致发光谱,其发光峰分别位于361 nm和430 nm,比较发现光致发光的峰位随比分的改变有微小的蓝移.文中对发光机理进行初步讨论.
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| 关 键 词： | 磁控溅射 纳米硅 光致发光 量子限制效应 |
| 文章编号： | 1000-5013（2006）01-0035-04 |
| 收稿时间： | 2005-10-09 |
| 修稿时间： | 2005-10-09 |
The Photoluminescence of SiO2 Films Contained Nano Silicon Particles |
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| Lin Shangxin,Guo Hengqun. The Photoluminescence of SiO2 Films Contained Nano Silicon Particles[J]. Journal of Huaqiao University(Natural Science), 2006, 27(1): 35-38 |
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| Authors: | Lin Shangxin Guo Hengqun |
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| Affiliation: | College of Information Science and Engineering, Huaqiao University, 362021, Quanzhou, China |
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| Abstract: | The SiO_2 films contained nano silicon particles are prepared by using magnetron sputtering technique.The nano silicon particles with different particle diameter are obtained by adjusting and controlling the score of Si-SiO_2 complex target and processing in high temperature annealing under different temperature.By using X ray diffraction to analyze the sample,the averaged particle diameters of nano silicon particles are obtained.The photo luminescence spectrum of the sample is measured,and the peaks of luminescence at 361 nm and 430 nm are compared.The peak of photoluminescence is found to have a little blue-shift with the change of score.The mechanism of its photoluminescence is discussed. |
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| Keywords: | magnetron sputtering nano silicon particles photoluminescence quantum confinement |
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