| 硅太阳电池材料的深能级瞬态谱检测 |
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| 引用本文： | 谢基凡,丘思畴,丘睦钦.硅太阳电池材料的深能级瞬态谱检测[J].华中科技大学学报(自然科学版),1987(4). |
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| 作者姓名： | 谢基凡 丘思畴 丘睦钦 |
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| 作者单位： | 华中工学院固体电子学系
(谢基凡，丘思畴)，华中工学院固体电子学系(丘睦钦) |
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| 基金项目： | 国家自然科学基金资助项目(NSFC) |
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| 摘 要： | 本文利用深能级瞬态谱(DLTS)技术,检测和分析了制作硅太阳电池的低阻硅材料。结果表明,即使是专门订制的低阻(CZ)硅材料,通常也存在一个或若干个深中心,它们对太阳电池效率有很大影响。本文认为,制作高效率太阳电池的硅材料,除常规要求外,还应对其深中心浓度有严格的要求,即DLTS谱中不出现明显的谱峰。
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| 关 键 词： | 太阳能电池 深能级瞬态谱 高效硅太阳能电池 |
The Deep Level Transient Spectrum (DLTS) Tests on Silicon Materials for Solar Cells |
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| Xie Jifan Qiu Sichou Qiu Muqin.The Deep Level Transient Spectrum (DLTS) Tests on Silicon Materials for Solar Cells[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1987(4). |
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| Authors: | Xie Jifan Qiu Sichou Qiu Muqin |
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| Institution: | Xie Jifan Qiu Sichou Qiu Muqin |
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| Abstract: | In this paper tests on silicon materials of low resistivity using DLTS technique are reported. It has been found that one or several deep level impurity centers exist in the material although it was specially prepared for solar cells. More strict requirements have to be imposed on the deep level centers so that the solar cell efficiency will not be seriously deteriorated, that is, no obvious peaks should be allowed to appear in the DLTS spectrum. |
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| Keywords: | Solar cells Deep level transient spectroscopy Highly efficient silicon solar cell |
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