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连续束模式下β衰变研究的实验装置
引用本文:何超,李湘庆,华辉,江栋兴,叶沿林,程奕源,孙君杰,田正阳,王硕,王赫,胡正国,杨彦云,徐瑚珊,李智焕,徐川,宋玉收,刘辉兰,王恩宏,王建松.连续束模式下β衰变研究的实验装置[J].中国科学:物理学 力学 天文学,2012(10):1056-1061.
作者姓名:何超  李湘庆  华辉  江栋兴  叶沿林  程奕源  孙君杰  田正阳  王硕  王赫  胡正国  杨彦云  徐瑚珊  李智焕  徐川  宋玉收  刘辉兰  王恩宏  王建松
作者单位:[1]北京大学物理学院,核物理与核技术国家重点实验室,北京100871 [2]Tohoku University, Kawauchi, Aoba-ku, Sendai 980-8576, Japan; [3]哈尔滨工程大学核科学与技术学院,哈尔滨150001 [4]中国科学院近代物理研究所,兰州730000
基金项目:国家自然科学基金资助项目(批准号:11175003,10875002)
摘    要:为开展远离稳定线原子核的β衰变实验研究,我们研制了一套新的粒子注入和β探测装置.这套探测装置具有能量覆盖范围大、能量分辨好和工作稳定等特点.在束实验结果显示这套探测装置可以精确给出衰变母核和β电子之间的时间关系和位置关联信息,使我们可以在连续束工作模式下对衰变出射β电子进行准确的归属判定,大大减少了衰变谱的本底,确保了实验数据的精度,为我们在极低流强下开展衰变谱学的研究提供了一种可靠的方法.

关 键 词:远离稳定线  ?衰变  粒子注入和?探测装置  位置关联

A new implantation and beta detection system used in the beta-decay studies
HE Chao,LI XiangQing,HUA Hui,JIANG DongXing,YE YanLin,LI ZhiHuan,XU Chuan,WANG EnHong,CHENG YiYuan,SUN JunJie,TIAN ZhengYang,WANG Shuo,WANG He,SONG YuShou,LIU HuiLan,WANG JianSong.A new implantation and beta detection system used in the beta-decay studies[J].Scientia Sinica Pysica,Mechanica & Astronomica,2012(10):1056-1061.
Authors:HE Chao  LI XiangQing  HUA Hui  JIANG DongXing  YE YanLin  LI ZhiHuan  XU Chuan  WANG EnHong  CHENG YiYuan  SUN JunJie  TIAN ZhengYang  WANG Shuo  WANG He  SONG YuShou  LIU HuiLan  WANG JianSong
Institution:, HU ZhengGuo, YANG YanYun & XU HuShan School of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China 2 Tohoku University, Kawauchi, Aoba-ku, Sendal 980-8576, Japan; 3 College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001, China; 4 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
Abstract:To study the beta decay of nuclei far from the beta-stable valley, a new implantation and beta detection system has been developed at the Peking University. Working with the logarithmic MPR-16 preamplifier, this detection system covers a large energy range from keV to GeV with good energy resolution and stability. By correlating the implantation nuclei with their subsequent beta decays within the same pixel of a double-sided silicon detector (DSSD), we can measure the decay time of the implantation nuclei with much less disturbance from the neighboring unstable nuclei and background.
Keywords:far from the stability  beta decay  a new implantation and beta detection system  position correlation
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