金属／非晶硅势垒低频电容中等价的隙态密度分布

本文证明:在一定条件下,描述非晶硅隙态密度分布的三种基本函数,即均匀分布、指数分布和双曲分布,在计算金属/非晶硅势垒低频电容时也是等价的.并通过测量室温时低频势垒电容,得到了隙态密度分布函数模型等价的标准.

The Equivalent Distribution of Gap State Density in Low Frequency Capacitance of M/a-Si Barrier

In this paper we demonstrate that under certain conditions the three basic distribution function models to describe the gap state density of amorphous silicon (a-Si), i.e. uniform distribution, exponential distribution and hyperbolic distribution are also equivalent in calculating low frequency capacitance of Metal/a-Si barrier. An equivalence standard of distribution function models of gap state density is obtained by measuring the low frequency capacitance of Metal/a-Si in room temperature.