| 电化学沉积法制备Cu2S薄膜及EPIR效应 |
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| 引用本文： | 王红霞,罗昌俊,阚芝兰,石大为,杨昌平.电化学沉积法制备Cu2S薄膜及EPIR效应[J].平顶山师专学报,2013(5):39-43. |
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| 作者姓名： | 王红霞 罗昌俊 阚芝兰 石大为 杨昌平 |
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| 作者单位： | 湖北大学物理学与电子技术学院,湖北武汉430062 |
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| 摘 要： | 以Na2S溶液为沉积液，在一定的温度、pH值、电压和时间下，采用电化学沉积的方法，在铜衬底上生长出一层质地均匀的蓝色Cu：s薄膜．通过XRD及SEM对样品的化学成分及表面与截面形貌进行表征，对G/Cu2S/Cu/Ag结构进行直流I-V及电脉冲诱导电阻转变（EPIR）效应测试．结果表明Ag/Cu2S/Cu/Ag结构的Ag/Cu2s结点处存在明显的EPIR效应，而且相对于单个Ag/cu2s结点而言，Ag/cu2S双结点具有更大的结点电阻且EPIR效应更明显．另外，Ag/Cu2S/Cu/Ag结构的EPIR效应还与测量的脉冲参数和测量温度有关．对于本样品而言，最佳测量温度为室温，脉冲宽度t0为0．00018．
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| 关 键 词： | 电化学沉积 cu2S薄膜 电脉冲诱导电阻转变 结电阻 脉冲参数 |
Electrochemical Deposition and EPIR Effects of Cu2S Film |
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| WANG Hongxia,LUO Changjun,KAN Zhilan,SHI Dawei,YANG Changping.Electrochemical Deposition and EPIR Effects of Cu2S Film[J].Journal of Pingdingshan Teachers College,2013(5):39-43. |
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| Authors: | WANG Hongxia LUO Changjun KAN Zhilan SHI Dawei YANG Changping |
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| Institution: | ( School of Physics and Electronic Technology, Hubei University, Wuhan, Hubei 430062, China) |
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| Abstract: | The films of copper sulfide （Cu2S） are obtained by electrochemical deposition on copper （Cu） substrates at certain temperature, pH value, voltage and time. The phase composition, crystal structure, microstruc ture of Cu2S films are characterized with XRD, SEM. The Electric -Pulse -Induced -Resistance（EPIR） switc hing effect and the I - V property of Ag/Cu2S/Cu/Ag devices are examined as well. The results show that the in terface of Ag/Cu2S structure has EPIR effect, and the structure with two junctions shows larger resistance and more pronounced EPIR effect compared with that of one Ag/Cu2S connection. In addition,the EPIR effect of Ag/ Cu2S/Cu/Ag devices is associated with the pulse parameters and the measuring temperature. |
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| Keywords: | electrochemical deposition Cu2S EPIR effect junction resistance pulse parameters |
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