Laser-induced self-organization in Se–Te–Sn–Cd glassy semiconductor for developing novel light-sensing dielectrics

The laser-induced effects on dielectric properties of chalcogenide glass(Ch Gs) have been present in a glassy system of Se–Te–Sn–Cd for possible applications in optics and optoelectronics such as light-controlled capacitance-based touch displays. The temperature/frequency dependence of dielectric relaxation before and after laser exposure was investigated by using laser sources of different wavelengths(405 nm, 532 nm, 690 nm, and 785 nm). The result showed the presence of laser-induced residual effects on dielectric properties(dielectric constant/loss and a.c. conductivity) after the exposure of continuous-wave laser sources of chosen wavelengths.Further analysis indicates that the modification in the meta-stable state due to self-organization is the feasible mechanism of observed persistent light-sensing effects.

Laser-induced self-organization in Se–Te–Sn–Cd glassy semiconductor for developing novel light-sensing dielectrics

The laser-induced effects on dielectric properties of chalcogenide glass (ChGs) have been present in a glassy system of Se–Te–Sn–Cd for possible applications in optics and optoelectronics such as light-controlled capacitance-based touch displays. The temperature/frequency dependence of dielectric relaxation before and after laser exposure was investigated by using laser sources of different wavelengths (405 nm, 532 nm, 690 nm, and 785 nm). The result showed the presence of laser-induced residual effects on dielectric properties (dielectric constant/loss and a.c. conductivity) after the exposure of continuous-wave laser sources of chosen wavelengths. Further analysis indicates that the modification in the meta-stable state due to self-organization is the feasible mechanism of observed persistent light-sensing effects.