高频二极管掺金、掺铂和12MeV电子辐照性能的研究

对高频二极管掺金、掺铂和１２ＭｅＶ电子辐照试验结果进行了对比分析研究．实验研究结果表明：掺金器件有最佳的ＶＦ～ＴＲＲ折衷曲线，但高温特性却最差；掺铂器件有最佳的高温特性，但ＶＦ～ＴＲＲ折衷曲线却最差；全面衡量器件各参数，１２ＭｅＶ电子辐照最有利于器件参数的最佳化．据此，提出了不同类型的高频二极管少子寿命控制技术的优选方案．

RESEARCH ON THE PROPERTIES OF HIGH FREQUENY DIODES WITH GOLD-DOPING PLATINUM-DOPING AND 12 MEV ELECTRON IRRADIATION

In manufacturing of high frequency devices, the conventional domestic method with which to reduce -the lifetime of minority carriers and enhance the switch speed o f the devices is to adopt the technology of gold-doping, but the results are unsatisfying. In our research of silicon divices,we have engaged a new attractive techmic by introducing 12 MeV high energy electron irradiation, which has shown its peculiar advantages and its vast promising application field.In order to appraise accurately the effects of gold-doping,platinum-doping as well as irradiation of 12 MeV electron in all aspects, and based on .the different properties of diverse high frequency devices,to choose scientifically the technology for controlling the lifetime of minority carriers,in this article, we have discussed the analytical results of 12 MeV electron irradiation experiments as compared with that of gold-doping,platinum-dopint method of the high frequency diodes. From the research, it can be concluded that devices with gold-doping have their optimum VF-Trr compromise curve but wost high temperature characteristc, and the case of devices with platinum-doping is just on the contrary. Inferred from all parameters of the high frequency diodes, we find that, for optimizing the parameters of diods devices, it is advantageous to adopt the 12MeV electron irradiation. That is to say with electron irradiation, we can get both optimum VF-Trr compromise curve and best high temperature characteristic. Further more, we can control Trrprecisely to acquire parameter unification of our product so as to increase the ratio of qualified products to a number of 30%.