镍基体上银和铜膜的择优取向及其价电子分析

目的研究在Ni（100）基体上沉积Ag和Cu膜的择优取向的形成机理。方法采用X-射线衍射进行分析,根据固体与分子经验电子理论（EET）的键距差（BLD）方法,计算Ni（100）晶面、Ag和Cu的33个晶面的平均电子密度及相对电子密度差。结果X-射线衍射分析结果表明,在Ni（100）基体上沉积Ag和Cu膜的主要择优取向为（111）,其次依次为（100）和（110）。计算结果表明,2个晶面的电子密度差越小,相应的择优取向越强。结论从界面处电子密度的连续原理成功地分析了在基体上沉积薄膜的择优取向的产生机理。

Preferred orientations of Ag and Cu films on Ni substrate and valence electron analysis

Aim In order to study the formation mechanism of the preferred orientations for thin films,Ag and Cu films deposited on Ni(100) substrate.Methods X-ray diffraction(XRD) was used,the average electron densities and relative electron-density differences(REDD) between Ni(100) and 33 planes of Ag or Cu crystal were calculated based on the method of Bond Length Difference(BLD) of the Empirical Electron Theory(EET) of solids and molecules.Results The results by X-ray diffraction(XRD) show that the preferred orientations of Ag and Cu films deposited on Ni(100) substrate were(111),(100) and(110) in order.the results of calculations show that the more smaller the relative electron-density differences between two lattice planes is,the more stronger the preferred orientations is.Conclusion The preferred orientations appeared in Ag and Cu films have been explained satisfactory from continuity of electron density across interface.