| 室温下金属铝膜的霍尔效应初步研究 |
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| 引用本文： | 高莹,孟庆云. 室温下金属铝膜的霍尔效应初步研究[J]. 北京化工大学学报(自然科学版), 2012, 39(2): 114-117 |
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| 作者姓名： | 高莹 孟庆云 |
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| 作者单位： | 北京化工大学理学院,北京,100029;北京化工大学理学院,北京,100029 |
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| 摘 要： | 采用真空蒸发镀膜法制备了金属铝薄膜，在室温下，用四探针法测量了样品的电阻率和霍尔系数。结果表明，制成的金属铝膜，电阻率由块体材料的10-8Ω·m 增大到薄膜样品的10-5Ω·m；霍尔系数由块体材料的10-11m3/C数量级左右增大到10-4m3/C数量级；电阻率和霍尔系数随着金属铝膜厚度的减小而逐渐增大。
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| 关 键 词： | 真空蒸发 载流子浓度 电阻率 霍尔效应 |
| 收稿时间： | 2011-09-30 |
Preliminary study of the Hall effect of aluminum metal films at room temperature |
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| GAO Ying , MENG QingYun. Preliminary study of the Hall effect of aluminum metal films at room temperature[J]. Journal of Beijing University of Chemical Technology, 2012, 39(2): 114-117 |
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| Authors: | GAO Ying MENG QingYun |
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| Affiliation: | School of Science, Beijing University of Chemical Technology, Beijing 100029, China |
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| Abstract: | Aluminum metal films with thickness close to the nanometer scale have been fabricated by a vacuum evaporation coating method.The resistivity and Hall coefficient of the aluminum metal films were measured by the four-probe method.The resistivity of the sample increased from 10-8 Ω·m for the aluminum bulk metal to 10-5 Ω·m for the films,and the Hall coefficient increased from 10-11m3/C for the aluminum bulk metal to 10-4m3/C for the films.Higher resistivity and Hall coefficient were obtained by reducing the thickness of the aluminum metal film. |
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| Keywords: | vacuum evaporation carrier concentration resistivity Hall effect |
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