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| Evidence of Positron Trapping into Defects in Zn-Doped GaAs | |
| 引用本文： | Wang Zhu,Zheng Zi-yao,Su Ben-fa,Hu Wei-guo School of Physics and Technology,Wuhan University,Wuhan 430072,Hubei,China. Evidence of Positron Trapping into Defects in Zn-Doped GaAs[J]. 武汉大学学报:自然科学英文版, 2003, 8(4): 1103-1106. DOI: 10.1007/BF02903680 |
| 作者姓名： | Wang Zhu Zheng Zi-yao Su Ben-fa Hu Wei-guo School of Physics and Technology Wuhan University Wuhan 430072 Hubei China |
| 作者单位： | Wang Zhu，Zheng Zi-yao，Su Ben-fa，Hu Wei-guo School of Physics and Technology，Wuhan University，Wuhan 430072，Hubei，China |
| 基金项目： | SupportedbytheNationalNaturalScienceFoundationofChinaandtheNationalScienceFoundationofHubeiProvince(1 0 3750 4 3) |
| 摘 要： | 0 IntroductionPositronlifetimespectroscopy ,whichisdirectlysensitivetovacancy typedefects,isanestablishedmethodforstudyingthedefectinsemiconductor[1 ] .Uptonow ,manyworkshavebeenreportedonn typeGaAsandsemi insulating (SI) typeGaAsusingthistechnique.Ithasbeenprovedthatpositronanni hilationspectroscopyisaefficientmethodtodetectdefectsinsemiconductor[2 ,3] .However,muchlessstudiesconcernedwithp typematerialshasbeendone .Thereisadiscrepancyonpositrontrappingintodefectsin p |typeGaAs.Somestu… |
| 收稿时间： | 2003-01-05 |
Evidence of positron trapping into defects in Zn-doped GaAs |
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| Zhu,Wang,Zi-yao,Zheng,Ben-fa,Su,Wei-guo,Hu. Evidence of positron trapping into defects in Zn-doped GaAs[J]. Wuhan University Journal of Natural Sciences, 2003, 8(4): 1103-1106. DOI: 10.1007/BF02903680 | |
| Authors: | Zhu Wang Zi-yao Zheng Ben-fa Su Wei-guo Hu |
| Affiliation: | (1) School of Physics and Technology, Wuhan University, 430072 Wuhan, Hubei, China |
| Abstract: | The defect properties in as-grown and deformed p-type GaAs with different concentration of dopants and different growth method have investigated by positron lifetime measurement. The result indicates that no positron trapping was observed in LEC-grown Zn-doped p-type GaAs. However, in HB- and FZ-grown Zn-doped GaAs, positron trapping into vacancy type defects was observed. In deformed samples, clusters were formed during deformation. Positron detected shallow positron traps and the dominant shallow positron traps were attributed to Zn acceptors in Zn-doped GaAs. |
| Keywords: | positron annihilation defect semiconductor deformation p-type GaAs |
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