| 影响NTD硅掺杂精度的因素 |
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| 引用本文： | 徐小琳,王家英.影响NTD硅掺杂精度的因素[J].清华大学学报(自然科学版),1987(6). |
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| 作者姓名： | 徐小琳 王家英 |
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| 作者单位： | 核能技术研究所
(徐小琳)，核能技术研究所(王家英) |
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| 摘 要： | 本文在大量实验测量的基础上，对影响ＮＴＤ硅掺杂精度的因素作了较为详细的研究，给出了一些定量和定性的结果。用这些结果指导清华大学反应堆上ＮＴＤ硅的生产得到了满意的掺杂精度．在大批量的辐照条件下．对各种目标电阻率硅单晶的掺一杂，电阻率命中率＞９０％．断面电阻率不均匀度＜５％．
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| 关 键 词： | 中子通量 掺杂精度 影响 NTD 硅 |
Factors Affecting on NTD Silicon Doping Precision |
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| Xu Xiaolin, Wang Jiaying.Factors Affecting on NTD Silicon Doping Precision[J].Journal of Tsinghua University(Science and Technology),1987(6). |
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| Authors: | Xu Xiaolin Wang Jiaying |
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| Institution: | Institute of Nuclear Energy Technology |
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| Abstract: | The paper gives a detailed account of various kinds factors which affect on NTD silicon doping precision on the basis of a great amount of experiments and measurements. It also gives some quantitative and qualitative results. Guided by the results obtained, the Production of NTD silicon has been achieved with a satisfactory doping accuracy on the reactor of Tsinghua University. Under the conditions of a large batch irradiation, the crystal-silicon-doped hit rate of resistivity is greater than 90% and the heterogeneity of section resistivity is less than 5% for various target resistivities. |
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| Keywords: | neutron flux doping precision influence NTD silicon |
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