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| 硅锗合金氧化层中纳米结构的量子受限分析 | |
| 引用本文： | 黄伟其,祝亚,蔡绍洪,刘世荣.硅锗合金氧化层中纳米结构的量子受限分析[J].贵州大学学报(自然科学版),2003,20(1):24-27. |
| 作者姓名： | 黄伟其 祝亚 蔡绍洪 刘世荣 |
| 作者单位： | 1. 贵州教育学院物理系,贵州,贵阳,550001 2. 铜仁师专物理系,贵州,铜仁,554300 3. 贵州大学物理系,贵州,贵阳,550025 4. 中科院地化所,贵州,贵阳,550002 |
| 基金项目： | 贵州省自然科学基金资助 ( 0 0 30 6 6 )。 |
| 摘 要： | 在硅锗合金氧化层中发现锗纳米表层结构，并分析了其时应的PL谱结构。提出相对应的量子受限模型计算公式和算法，理论分析结果与实验结果拟合较好。 |
| 关 键 词： | 硅锗合金 氧化层 纳米表层结构 PL谱 量子受限分析 量子受限模型 |
Quantum Confinement Analysis of Nanostructures in Oxidation of SiGe Alloys |
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| Abstract.Quantum Confinement Analysis of Nanostructures in Oxidation of SiGe Alloys[J].Journal of Guizhou University(Natural Science),2003,20(1):24-27. | |
| Authors: | Abstract |
| Abstract: | Author investigate the oxidation behaviour of Si 1-xGe x alloys (x=0.05, 0.15, and 0.25). The thickness of nanolayers and property of nanoparticles in oxide films after oxidation in O 2 (dry) atmosphere at different temperature and for various lengths of time are measured with the high precision ellipsometer, the Rutherford backscattering spectrometry and high-resolution scanning transmission electron microscopy.It was found that rejection of Ge from oxide layer results in piling up Ge at the interface between the growing SiO 2 and the remaining SiGe, which forms a nanometer Ge-rich layer.We find a nanometer cap layer over the oxide film after fast oxidation, in which there are many Ge nanoparticles.Some new peak in PL spectra relating to nanostructure is discovered for first time.We provide a quantum confinement model to analyse the PL spectra and the mechanism of nanostructure of the oxide and Ge segregation. |
| Keywords: | nanostructure quantum confinement PL spectra |
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