| 基本FFET的试制和性能研究 |
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| 引用本文： | 于军,周文利,曹广军,谢基凡.基本FFET的试制和性能研究[J].华中科技大学学报(自然科学版),1996(3). |
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| 作者姓名： | 于军 周文利 曹广军 谢基凡 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 论述了铁电场效应晶体管（ＦＦＥＴ）的基本工作原理，给出了其设计方案．采用ＳＯＬ－ＧＥＬ法制备了基本的ＭＦＳ－ＦＥＴ和ＭＦＯＳ－ＦＥＴ，对其电性能进行了测试分析．测试结果表明：ＭＦＯＳ结构的ＦＦＥＴ具有极化存储特性．
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| 关 键 词： | 铁电场效应晶体管 MFOS结构 极化存储 |
On the Preparation and Properties of the Basic Ferroelectric Field Effect Transistor |
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| Yu Jun,Zhou Wenli, Cao Guangjun,Xie Jifan.On the Preparation and Properties of the Basic Ferroelectric Field Effect Transistor[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1996(3). |
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| Authors: | Yu Jun Zhou Wenli Cao Guangjun Xie Jifan |
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| Abstract: | he working principle of the ferroelectric field effect transistor (FFET) is described with the design scheme given. FETs with M/F/S and M/F/O/S structures are prepared with the SOLGEL technique.The electrical properties are tested by C-V and I-V measurement. Measurement results show that the switching behavior of FFETs with M/F/O/S heterostructure exhibit a feature of the polarization-induced memory. |
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| Keywords: | FFETF M/F/O/S structure polarization-induced memory |
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