| 无序和有序GaInP2的光致发光谱 |
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| 引用本文： | 吕毅军,俞容文,郑健生.无序和有序GaInP2的光致发光谱[J].厦门大学学报(自然科学版),1999,38(3):362-365. |
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| 作者姓名： | 吕毅军 俞容文 郑健生 |
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| 作者单位： | 厦门大学物理学系,厦门,361005 |
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| 基金项目： | 国家自然科学基金,中科院上海技术物理所开放课题 |
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| 摘 要： | 对无序和有序ＧａＩｎＰ２样品分别作了变温和变激发功率密度光致发光谱的测量．无序样品表现为与激发功率密度无关的单谱峰结构，在不同温度区有不同的激活能．有序样品则表现为双峰结构，其中高能端发光峰强度随温度升高先增强而后热猝灭．根据样品有序度及取向超晶格模型解释了实验现象
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| 关 键 词： | 发光，有序，无序，Ⅲ－V族半导体 |
Photoluminescence Spectra of Disordered and Ordered GaInP2 |
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| Lu Yijun,Yu Rongwen,Zheng Jiansheng.Photoluminescence Spectra of Disordered and Ordered GaInP2[J].Journal of Xiamen University(Natural Science),1999,38(3):362-365. |
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| Authors: | Lu Yijun Yu Rongwen Zheng Jiansheng |
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| Abstract: | Temperature
dependent and excitation intensity dependent photoluminescence spectra of both disordered
and ordered GaInP 2 are measured. The disordered sample is characterized by its single peak
photoluminescence spectrum, which is excitation intensity independent and has different
activation energy at different temperature region, while the ordered sample shows double peaks
structure. As the temperature increased, the intensity of high energy peak increased
anomalously at first and quenches afterwards. The experimental phenomena are reasonably
explained in terms of lattice ordering and orientation superlattice model. |
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