提高光刻胶陡直度的方法

光刻是利用光化学反应将临时电路图形从掩膜版转移到光刻胶膜上的工艺。影响光刻质量的因素包含光源、掩膜版与光刻胶三部分。其中,掩膜版与光源（光刻机）在日常生产中视为固定不变的因素。相比较而言,光刻胶受曝光条件、显影条件、烘干条件等诸多因素的影响,其性质会有明显变化。本文就光刻胶膜的陡直度（以下简称＂陡直度＂）进行了一系列研究和实验,其最终目的是找到现有条件下提高光刻线条陡直度的方法。

Methods for Improving the Steepness of Photo Resist

Lithography is a process which uses photochemical reaction to transfer temporary circuit pattern from mask to PR film. The factors that affect the quality of lithography include the UV source,mask and PR.. Among the factors,we treat the mask and the UV source（ aligner） as steady conditions. Only the PR,compared with the other factors,its features can be influenced by changing the parameters of exposure,development,or baking conditions. This paper makes a series of research and experiment for the steepness of PR film in order to find some methods for increasing the steepness of PR film under the existing conditions.