| 高压大功率VDMOSFET终端技术的研究 |
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| 引用本文： | 陈岩.高压大功率VDMOSFET终端技术的研究[J].北京工商大学学报(自然科学版),1999,17(1):14. |
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| 作者姓名： | 陈岩 |
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| 作者单位： | 北京轻工业学院自动化工程系,北京,100037 |
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| 摘 要： | 对实现ＶＤＭＯＳＦＥＴ高耐压水平的场限环结合场板的结终端技术进行了研究．分析了表面电荷密度对耐压水平和优化环间距的影响．计算结果与文献中的数值模拟结果相符合
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| 关 键 词： | 场限环 击穿电压 表面电荷 场板 |
| 修稿时间： | 1998－12－04 |
RESEARCH OF JUNCTION TERMINAL TECHNIQUE ON HIGH VOLTAGE POWER VDMOSFET |
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| Chen Yan.RESEARCH OF JUNCTION TERMINAL TECHNIQUE ON HIGH VOLTAGE POWER VDMOSFET[J].Journal of Beijing Technology and Business University:Natural Science Edition,1999,17(1):14. |
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| Authors: | Chen Yan |
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| Abstract: | The junction terminal technical the floating field limiting ring with field plate has been researched. The effect of the surface charge on the breakdown voltage and optimum ring spacing of single floating field limiting ring structure has been analysed. The accuracies of the analytical expressions are verified by comparing with the numerical simulation results in the published paper. |
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| Keywords: | field limiting ring breakdown voltage surface charge field plate |
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