| PTCDA/p-Si异质结势垒区特性理论的研究 |
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| 引用本文： | 张旭.PTCDA/p-Si异质结势垒区特性理论的研究[J].甘肃科学学报,2008,20(4). |
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| 作者姓名： | 张旭 |
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| 作者单位： | 甘肃联合大学,数学与信息学院,甘肃,兰州,730000 |
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| 摘 要： | 有机半导体材料苝四甲酸二酐(PTCDA)是弱p型半导体材料,其载流子浓度为5×1015/cm3,禁带宽度为2.2eV,可与多种材料形成异质结.详细计算了PTCDA/p-Si异质结势垒形成的电势分布,电场分布和电流-电压(伏安)特性,计算结果与实验结果一致.
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| 关 键 词： | 异质结 电势分布 电场分布 伏安特性 |
A Theoretical Study on the Characteristics in Heterojunction Barrier Potential Region |
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| ZHANG Xu.A Theoretical Study on the Characteristics in Heterojunction Barrier Potential Region[J].Journal of Gansu Sciences,2008,20(4). |
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| Authors: | ZHANG Xu |
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| Institution: | School of Mathematics and Information Science;Gansu United University;Lanzhou 730000;China |
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| Abstract: | The organic semiconducting material of 3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)is a subtle p-type material with the hole carrier density of 5×1015/cm3 and the band gap of 2.2eV and it can form heterojunctions with many other materials.The voltage distribution,the electric field distribution and the characteristics of electric current-electric voltage formed by PTCDA/p-Si heterojunction barrier potentials are calculated in detail.They are consistent with the experimental results. |
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| Keywords: | heterojunction voltage distribution electric distribution characteristics of electric current-electric voltage |
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