| 应用于WLAN的SiGe射频功率放大器的设计 |
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| 引用本文： | 胡锦,翟媛,郝明丽,张笑瑜.应用于WLAN的SiGe射频功率放大器的设计[J].湖南大学学报(自然科学版),2012,39(10):56-59. |
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| 作者姓名： | 胡锦 翟媛 郝明丽 张笑瑜 |
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| 作者单位： | 湖南大学物理与微电子科学学院;中国科学院微电子研究所 |
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| 基金项目： | 国家科技重大专项项目(2011ZX02503);湖南省科技计划资助项目(2011GK3129) |
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| 摘 要： | 采用0.18μm SiGe BiCMOS工艺,设计应用于无线局域网(WLAN)802.11b/g 2.4GHz频段范围内的AB类射频功率放大器.该放大器采用三级放大结构,偏置电路采用电流镜形式的自适应偏置控制电路,具有温度补偿和线性化作用.后仿真结果显示:1dB压缩点输出功率高达27.73dBm,功率增益为25.67dB,电路的S参数在2.4GHz频段内,输出匹配S22小于-10dB,S12小于-60dB.
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| 关 键 词： | 射频 功率放大器 SiGe |
Design of SiGe RF Power Amplifier for WLAN |
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| HU Jin,ZHAI Yuan,HAO Ming-li,ZHANG Xiao-yu.Design of SiGe RF Power Amplifier for WLAN[J].Journal of Hunan University(Naturnal Science),2012,39(10):56-59. |
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| Authors: | HU Jin ZHAI Yuan HAO Ming-li ZHANG Xiao-yu |
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| Institution: | 1(1.College of Physics and Microelectronics Science,Hunan Univ,Changsha,Hunan 410082,China; 2.Institute of Microelectronics,Chinese Academy of Science,Beijing 100029,China) |
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| Abstract: | A RF power amplifier was designed for WLAN 802.11 b/g 2.4 GHz based on 0.18 μm SiGe BiCMOS technology.The PA consists of three stage amplifiers working in Class AB.Adaptive bias circuit based on current mirror was used,with temperature compensation and linearization.The post-layout simulation results showed that the designed power amplifier had an output of 1 dB,a compression point of 27.73 dBm,a power gain of 25.67 dB,an S22 of less than-10 dB and an S12 of less than-60 dB in 2.4 GHz. |
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| Keywords: | ratio power amplifier SiGe |
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