| 对向靶反应溅射制备AlN薄膜的结构及物性 |
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| 引用本文： | 吴世伟,曾令民.对向靶反应溅射制备AlN薄膜的结构及物性[J].广西大学学报(自然科学版),1998,23(2):131-134. |
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| 作者姓名： | 吴世伟 曾令民 |
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| 作者单位： | 广西大学材料科学研究所，广西大学材料科学研究所，广西大学材料科学研究所，广西大学材料科学研究所 南宁，530004，南宁，530004，南宁，530004，南宁，530004 |
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| 摘 要： | 用对向靶反应溅射制备的ＡｌＮ薄膜，高气压为取向，低气压下为取向，精确测量ＸＲＤ衍射峰位可看出ＡｌＮ薄膜有较大应力。对硬度的测量发现ＡｌＮ薄膜硬度较大，取向对硬度没有影响。
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| 关 键 词： | 对向靶溅射 薄膜 制备 X光衍射 氨化铝 物性 |
Aluminium Nitride Films Preprared by Facing Targets Sputtering and Their Characteristics |
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| Wu Shiwei Zeng Lingmin Zhang Lipin Qin Wen.Aluminium Nitride Films Preprared by Facing Targets Sputtering and Their Characteristics[J].Journal of Guangxi University(Natural Science Edition),1998,23(2):131-134. |
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| Authors: | Wu Shiwei Zeng Lingmin Zhang Lipin Qin Wen |
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| Abstract: | Aluminium nitride (AlN) films are deposited on Si(lOO) wafers by facing targets
sputtering in a mixed Ar - N 2 discharge. It is found that C - axis oriented films are deposited
at low pressures and the films with (100) orientation are deposited at high pressures. There
is an expansion of C -axis and shows that the films are in a state of strong stress. Binding en
ergies of the N 1S and Al 2P are 396. 7 eV and 73. 7 eV respectively by XPS analysis of the
films with (100) orientation. The hardness measurements of A1N films indecate that the
hardness values are fairly high and have no relation with the orientation of films. |
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| Keywords: | facing targets sputtering aluminium nitride X - ray diffraction |
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