| 坐标变换法对Newman方程参数的确定 |
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| 引用本文： | 丘第荣,林应举,范得培,李李泉.坐标变换法对Newman方程参数的确定[J].应用科学学报,1988,6(4):340-344. |
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| 作者姓名： | 丘第荣 林应举 范得培 李李泉 |
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| 作者单位： | 1. 南京大学;2. 轻工业部电光源材料研究所 |
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| 摘 要： | 由一次曝光得到背射赝Kossel线,然后通过坐标变换和非线性最小二乘法,可以得到Newman方程参数,从而计算出样品相应的晶面间距.本实验测量了硅单晶d{533}晶面间距,其精度可达8×10-6nm.本文讨论了背射赝Kossel一次曝光法的实验步骤及实验的主要误差来源.
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| 收稿时间： | 1986-06-26 |
| 修稿时间： | 1987-10-04 |
DETERMINATION OF THE PARAMETERS OF NEWMAN EQUATION BY COORDINATES TRANSFORMATION |
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| QIU DIRONG,LIN YINGJU,LI LIQUAN,FAN DEPEI.DETERMINATION OF THE PARAMETERS OF NEWMAN EQUATION BY COORDINATES TRANSFORMATION[J].Journal of Applied Sciences,1988,6(4):340-344. |
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| Authors: | QIU DIRONG LIN YINGJU LI LIQUAN FAN DEPEI |
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| Institution: | 1. Center of Materials Analysis, Nanjing University;2. Department of Mathematics, Nanjing University;3. Research Institute of Electrical Light Source Materials, Nanjing;4. Department of Physics, Nanjing University |
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| Abstract: | By coordinates transformation and calculation with the Least Square method, we can determine the parameters of the Newman equation which represents the back reflection pseudo-Kossel curve. From the parameters, the planar spacing d of the corresponding lattice planes can be calculated. In our experiment, the d {533} of a single crystal silicon is measured. The accuracy of measurement is about 8×10-6nm. The experimental procedures and the principal sources of error are also discussed. |
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