Y1.9SiO5:Tb3+0.1发光材料的制备及其发光性能研究

采用溶胶-凝胶法制备Y1.9SiO5:Tb3+0.1发光材料,并在250～1000℃不同温度下进行煅烧.通过对此样品在不同温度下激发光谱、发射光谱、红外光谱以及X衍射图谱进行研究,发射谱中625nm、587nm、545nm、442nm处显示了Tb的5D4-7Fj(j=3,4,5,6)的特征跃迁,491nm处显示了5D3-7F6的特征跃迁.红外和X衍射图都显示500℃是样品从无定形到晶形的温度变化点,800℃时晶体稳定且晶形最好.无定形态时样品的荧光强度随温度升高而降低,而晶态时其荧光强度随温度变化趋势正好相反.说明无定形态时,Tb3+主要处于无反演中心格位;而在晶态结构中,Tb3+主要处于反演中心格位.

Preparation and emission properties of Y1.9SiO5:Tb3+0.1 luminescence material

Y1.9SiO5∶Tb3+0.1 luminescence materials were prepared by sol-gel method and calcined at different temperatures from 250 to 1000℃.Their structures were characterized by FTIR and XRD and their excitation and emission spectra of crystal and amorphous Y1.9SiO5∶Tb3+0.1 were measured at room temperature.The results showed that Y1.9SiO5∶Tb3+0.1 prepared in the experiment possesses 5D4-7Fj(j=3,4,5,6) characteristic transition,which their peaks were located at 625,587,545,and 442 nm,respectively.The peak at 491nm was attributed to the 5D3-7F6 characteristic transition.Simultaneously,it was found that structure of Y1.9SiO5∶Tb0.13+ materials transferred from amorphous state to crystalline structure at 500℃ and displayed the best crystalline state at 800℃,and the fluorescence intensity of Y1.9SiO5∶Tb3+0.1 decrease with the calcined temperature at amorphous state and increase with the calcined temperature at crystalline state.It showed that the sample at crystalline state was located at the reverse of the center of lattice,while the case was reverse with the sample at amorphous state.