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基于C纳米管的磁滞隧穿结的自旋输运
引用本文:杨翀.基于C纳米管的磁滞隧穿结的自旋输运[J].太原师范学院学报(自然科学版),2008,7(3):89-92.
作者姓名:杨翀
作者单位:忻州师范学院,山西,忻州,034000
摘    要:文章利用基于密度泛函的第一性原理和格林函数相结合的方法研究了由铁磁性原子(Fe)填充(3,3)C纳米管构成的磁滞隧穿结的自旋输运性质.研究表明,当两导线磁矩平行和反平行时,通过系统的自旋流是不同的,从而导致隧穿磁电阻效应(TMR).随着偏电压增加,TMR减小,甚至出现负的TMR,文章利用Jullier模型对此给出物理解释.

关 键 词:磁滞隧穿  自旋流  TMR

Spin Transport Properties of Magnetic Tunneling Junction Based on CNT
Yang Chong.Spin Transport Properties of Magnetic Tunneling Junction Based on CNT[J].Journal of Taiyuan Normal University:Natural Science Edition,2008,7(3):89-92.
Authors:Yang Chong
Institution:Yang Chong (Department of Physics, Xinzhou Teachers University, Xinzhou 034000 ,China)
Abstract:Spin-dependent transport of magnetic tunneling junction (MTJ) composed of Fe-filled Carbon Nanotube (CNT) has been investigated in this paper using first principle based on density function theory(DFT) coupled with Green Function. Investigation shows that the spin currents are different when the magnetic moments in both leads are parallel and anti-parallel, which leads to different total current. Also,according to the Jullier model,the tunnel magnetic resistance (TMR) was calculated. Calculation results indicate that TMR decreases with the augment of bias voltage,and even negative TMR is found under larger bias voltage,which shows similar properties as classical two dimensional MTJs.
Keywords:TMR
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