| 对向靶溅射法中直流负偏压对FeN化合物薄膜的结构和磁性的影响 |
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| 引用本文： | 孙长庆,姜恩永,刘裕光,张西祥,吕旗.对向靶溅射法中直流负偏压对FeN化合物薄膜的结构和磁性的影响[J].天津大学学报(自然科学与工程技术版),1989(4). |
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| 作者姓名： | 孙长庆 姜恩永 刘裕光 张西祥 吕旗 |
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| 作者单位： | 天津大学物理系
(孙长庆，姜恩永，刘裕光，张西祥)，天津大学物理系(吕旗) |
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| 摘 要： | 对向靶反应溅射法制备的FeN化合物薄膜的结构和磁性对基板偏压的变化很敏感,不同的偏压数值作用的效果不同。我们用基板偏压促进成膜原子间的相互扩散,以及对负离子排斥降低膜中N的浓度和粒子轰击对膜再溅射的观点解释了FeN膜的结构和磁性的变化。
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| 关 键 词： | 再溅射 晶格畸变 对向靶反应溅射 束缚磁场 |
INFLUENCE OF DC SUBSTRATE BIASING ON THE STRUCTURES AND MAGNETIC PROPERTIES OF FACING TARGETS SPUTTERED FeN FILMS |
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| Sun Changqing Jiang Enyong Liu Yuguang Zhang Xixiang Lu Qi.INFLUENCE OF DC SUBSTRATE BIASING ON THE STRUCTURES AND MAGNETIC PROPERTIES OF FACING TARGETS SPUTTERED FeN FILMS[J].Journal of Tianjin University(Science and Technology),1989(4). |
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| Authors: | Sun Changqing Jiang Enyong Liu Yuguang Zhang Xixiang Lu Qi |
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| Institution: | Sun Changqing Jiang Enyong Liu Yuguang Zhang Xixiang Lu Qi(Department of Ph(?)sics) |
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| Abstract: | The structures and magnetic properties of FeN compound films prepared by Facing-Targets Sputtering method are sensitive to the negative substrate bias voltage (V_b). The effects of Vb can promote the diffusion of adatoms, and resputtering processes as well as the repellent of negative ions which cause the reduction of N concentration of the films. |
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| Keywords: | resputtering lattice distortion facing targets reactive sputtering binding magnetic field |
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