电压对氮掺杂TiO_2/Ti光催化剂在可见光下催化性能的影响

为拓展TiO2对可见光的响应范围,采用先恒流再恒压的阳极氧化法制备了TiO2/Ti光催化剂,并运用等离子体基离子注入(PBII)技术对TiO2/Ti光催化剂进行了氮的掺杂改性研究。通过SEM和XRD对不同电压下制备的氮掺杂TiO2/Ti光催化剂进行了分析。结果表明,TiO2氧化膜粗糙多孔,主要是由锐钛矿相和金红石相组成,其最佳的制备电压为160V,离子注入条件为-30kV,4×105N.cm-2。氮元素主要以三种形态存在于TiO2的薄膜上,即原子β-N、分子γ-N和O-Ti-N。在可见光的照射下与未掺杂的TiO2/Ti光催化剂相比,氮掺杂的TiO2/Ti光催化剂表现出较好的光催化活性,其对罗丹明B的去除效率提高了12%。

Impact on photocatalytic performance of N-doped TiO2/Ti photocatalyst prepared by different voltage under visible light

To improve the visible-light photorespense scope of TiO2, TiO2/Ti photocatalysts were prepared by a se-quence of constant current and constant voltage control circuits. The prepared TiO2/Ti photocatalysts were modified by nitrogen used plasma based ion implantation (PBII) method. N-doped TiO2/Ti pbotocatalyst prepared under dif-ferent voltage were characterized by SEM and XRD. The results showed that the morphology of the TiO2 film, con-sist of anatase and futile phase, was rough and porous. The optical prepared condition was voltage 160 V and do-ping condition -30 kV, 4 × 1015 N·cm-2. The nitrogen species in the TiO2 film was β-N,γ-N and O-Ti-N. The N-doped TiO2/Ti photocatalyst had better photocatalytic activity than un-doped under visible light irradiation, rho-damine B removal efficiency was improved 12%.