体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件

分别以p型体硅和p型薄膜微晶硅为阳极, 以掺入MEH-PPV的PFO为发光层, 以透明金属Sm/Au为阴极, 制作了顶发光白光器件。器件结构是: 硅阳极/PEDOT:PSS/MEH-PPV:PFO/Cs₂CO₃/Sm/Au。通过调节MEH-PPV在PFO中的质量百分比, 改进了白光器件的发射色度。当MEH-PPV的质量百分比为0.13%时, 发光在白光范围, CIE色坐标为(0.372, 0.391)。研究了器件发光效率对体硅阳极电阻率的影响, 当体硅阳极电阻率为0.079 Ω•cm时, 器件电流效率和功率效率都达到极大, 分别是0.191 cd/A和0.131 lm/W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极, 通过调节Ni层厚度, 优化器件效率。当Ni层厚度为2 nm时, 薄膜硅阳极器件的电流效率和功率效率分别达到最大值: 0.371 cd/A和0.187 lm/W, 相对于最佳电阻率体硅阳极器件分别提高了94%和43%。

Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode

Polymer white light-emitting diodes(PWLEDs) with p-type Si and nanometer-thick(~10 nm) polycrystalline p-Si anode are reported.The structures of the PWLEDs are Si anodes/ PEDOT:PSS/ MEH-PPV: PFO/Cs2CO3/ Sm/ Au.PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer.It is found that when MEH-PPV is 0.13%,the PWLEDs show white emission with CIE coordinates of(0.372,0.391).The optimized p-Si anode resistivity of the PWLEDs is investigated.When the resistivity of p-Si is 0.079.cm,a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained.Furthermore,polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer,the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm.In comparasion with PWLEDs with p-Si anode,the maximum efficiency has raised 94% and 43% respectively.