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真空热迁移法制备硅垂直多重结X射线探测器
引用本文:季秉厚,张治国.真空热迁移法制备硅垂直多重结X射线探测器[J].内蒙古大学学报(自然科学版),1997,28(1):36-40.
作者姓名:季秉厚  张治国
作者单位:[1]内蒙古大学物理学系 [2]内蒙古工业大学电力学院
摘    要:用真空热迁移法,以高纯石墨作为加热元件,构成大面积均匀热板,并以纯铁为冷板,通过严格控制冷、热板的温度,形成稳定的热梯度场。采用高阻单晶硅作为探测器的基体材料,在硅片表面用激光来进行刻槽,在其表面上蒸铝后,置于热迁移场中进行热迁移。按照探测器的要求,蒸发钛-钯-银构成电极,经钝化处理后沉淀适当厚度的Al层作为窗口,构成垂直多重结X射线探测器。探测器具有良好的光谱响应,对X射线有较高的灵敏度,适于较

关 键 词:真空热迁移  垂直多重结  X射线探测器  硅器件

Vertical Multijunction X Rays Detector Prepared by Vaccum Thermomigration
Ji Binghou,Zhang Zhiguo,Li Rongping,Meng Fanying.Vertical Multijunction X Rays Detector Prepared by Vaccum Thermomigration[J].Acta Scientiarum Naturalium Universitatis Neimongol,1997,28(1):36-40.
Authors:Ji Binghou  Zhang Zhiguo  Li Rongping  Meng Fanying
Institution:Ji Binghou 1 Zhang Zhiguo 2 Li Rongping 1 Meng Fanying 1
Abstract:The vertical multijunction X rays detector is prepared by vaccum thermomigration.The stable thermal gradient field is established by high pure graphite to structure hot piece and pure iron block with a water cooled to structure cool piece.Temperatures of the hot piece and the cool piece are strictly controlled.The base material of the detector is high resistance single crystalline silicon.The grooves of the silicon wafer surface are formed by laser ablation,and high pure aluminium is deposited on the grooves,and the wafer is put in the thermal gradient field.Aluminium on the grooves is migrated and the vertical multijunction of lamellar consisting alternate p-and n-type silicon layer is fabricated.The electrode of the detector is formed by evaporated titanium,palladium,and silver according to requirement of the detector.The window material of the detector is formed by deposited aluminium layer after surface passivation.The detectors have a excellent spectral response and higher sensitivity at the range of X rays.It can be adapted for mesument of X rays of bigger dosage radition and wider intensity change.
Keywords:vaccum thermomigration  laser etching  vertical multijunction  X  rays detector  
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