| 射频功率对射频磁控反应溅射制备AlN薄膜的影响 |
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| 引用本文： | 于春花,陈希明,李化鹏.射频功率对射频磁控反应溅射制备AlN薄膜的影响[J].天津理工大学学报,2007,23(3):29-31. |
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| 作者姓名： | 于春花 陈希明 李化鹏 |
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| 作者单位： | 1. 天津理工大学,电子信息与通信工程学院
2. 天津市薄膜电子与通信器件重点实验室,天津,300191 |
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| 基金项目： | 天津市自然科学基金;天津市重点实验室基金;天津市教委资助项目 |
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| 摘 要： | 采用射频磁控溅射法在Si(100)衬底上制备了AlN薄膜,通过控制工艺参数可以沉积出不同择优取向的AlN薄膜,各工艺参数中射频功率对其择优取向的影响最大.XRD表征了AlN薄膜的结构,进而选择出最优射频功率.
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| 关 键 词： | AlN薄膜 射频磁控反应溅射法 择优取向 |
| 文章编号： | 1673-095X（2007）03-0029-03 |
| 收稿时间： | 2006-09-04 |
| 修稿时间： | 2006-09-04 |
Influence of sputtering power on depositing AlN films by RF-reactive magnetron sputtering method |
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| YU Chun-hua,CHEN Xi-ming,LI Hua-peng.Influence of sputtering power on depositing AlN films by RF-reactive magnetron sputtering method[J].Journal of Tianjin University of Technology,2007,23(3):29-31. |
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| Authors: | YU Chun-hua CHEN Xi-ming LI Hua-peng |
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| Institution: | 1. School of Electronics Information and Communication Engineering, Tianjin University of Technology, Tianjin 300191 ,China; 2. Tianjin Key Laboratory of Film Electronic and Communication Device, Tianjin 300191, China |
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| Abstract: | AlN films have been deposited by radio frequency(RF) magnetron sputtering method on Si(100).AlN films of different preferential orientation were deposited by controlling the different working parameters,in which the sputtering power has more influence on flims preferential orientation.XRD of AlN film showed the AlN films structure.,and then we can conclude the best sputtering power. |
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| Keywords: | AlN films RF-reactive magnetron sputtering preferential orientation |
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