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基于栅极信号的功率器件老化特征分析
引用本文:李硕,王红,杨士元. 基于栅极信号的功率器件老化特征分析[J]. 中国科学:技术科学, 2014, 0(10): 1273-1280
作者姓名:李硕  王红  杨士元
作者单位:清华大学自动化系;
摘    要:本文研究栅极动态信号在功率器件故障预测上的应用.首先介绍了功率器件栅极动态信号反映的相关失效机制,并分析了栅极动态信号的老化特征及影响因素.提出了老化特征提取方法,选定动态过程时间,动态过程面积比率作为老化特征.使用降频错位采样的方法还原高频采样下计算的老化特征,降低利用动态信号进行故障预测的采样频率,以提高方法可行性.通过NASA公布的数据集进行实验验证,提取的老化特征明显,降频采样达到了预期效果.

关 键 词:IGBT  功率MOSFET  故障预测  老化特征  可靠性

Aging feature analysis for power device based on gate signal
LI Shuo,WANG Hong,YANG ShiYuan. Aging feature analysis for power device based on gate signal[J]. Scientia Sinica Techologica, 2014, 0(10): 1273-1280
Authors:LI Shuo  WANG Hong  YANG ShiYuan
Affiliation:(Department of Automation, Tsinghua University, Beijing 100084, China)
Abstract:This paper studies the prognostic of power device based on gate signal. Gate signal related failure mechanisms and degradation features are presented. The method of computing the features, including the transient time and the area rate of transient gate signal, is proposed. To reduce the sampling frequency and improving the practicality of the prognostic, shift down-sampling is used to estimate the features. The method is tested on the IGBT prognostic dataset published by NASA, which shows that the features are effective and sampling frequency could be reduced.
Keywords:IGBT   power MOSFET   prognostic   failure precursor   reliability
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