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| 集成电路钝化层薄膜的纳米力学性质研究 | |
| 引用本文： | 吴子景,吴晓京,SHEN Weidian,蒋宾,JIANG Bin.集成电路钝化层薄膜的纳米力学性质研究[J].西安交通大学学报,2008,42(11). |
| 作者姓名： | 吴子景 吴晓京 SHEN Weidian 蒋宾 JIANG Bin |
| 作者单位： | 1. 复旦大学材料科学系,200433,上海 2. Department of Physics and Astronomy,Eastern Miching University,Ypsilanti,MI,48197 3. 上海集成电路研发中心,201203,上海 |
| 基金项目： | 上海市科委资助项目，上海市重点学科建设项目 |
| 摘 要： | 利用等离子体增强化学气相淀积工艺在P型单晶硅（111）衬底上制备了厚度为70、150、450nm的SiO2薄膜和100、170、220nm的Si3N4薄膜，并使用纳米压入仪对薄膜进行了纳米力学测试与分析．薄膜在不同载荷下的硬度和弹性模量计算采用Oliver-Pharr方法．在测量两种薄膜的硬度时没有发现压痕尺寸效应．SiO2薄膜的弹性模量与压入深度的依赖关系不明显，但与薄膜厚度的依赖关系较明显，薄膜厚度的增加将导致弹性模量显著减小，而Si3N4的弹性模量与薄膜厚度的依赖关系不明显，但与压入深度的依赖关系较明显，会随着压入深度的增加而逐渐增加到某一定值． |
| 关 键 词： | 薄膜 等离子体增强化学气相淀积 二氧化硅 氮化硅 纳米硬度 弹性模量 |
Nanomechanical Properties of Passivation Thin Films in Integrated Circuit |
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| WU Zijing,WU Xiaojing,SHEN Weidian,SHEN Wei-dian,JIANG Bin.Nanomechanical Properties of Passivation Thin Films in Integrated Circuit[J].Journal of Xi'an Jiaotong University,2008,42(11). | |
| Authors: | WU Zijing WU Xiaojing SHEN Weidian SHEN Wei-dian JIANG Bin |
| Institution: | WU Zijing1,WU Xiaojing1,SHEN Wei-dian2,JIANG Bin3 (1.Department of Materials Science,Fudan University,Shanghai 200433,China,2.Department of Physics , Astronomy,Eastern Michigan University,Ypsilanti,MI 48197,USA,3.Shanghai Integrated Circuit R&D Center,Shanghai 201203,China) |
| Abstract: | In the experiment herein,both SiO2 thin films and Si3N4 thin films were deposited by plasma enhanced chemical vapor deposition(PECVD) on p-type silicon(111) substrate.The film thickness got to 70,150,450 nm for SiO2,and 100,170,220 nm for Si3N4,respectively.A nanohardness tester was then used to conduct nanomechanical characterization on those SiO2 and Si3N4 thin films.Oliver-Pharr method was adopted in the calculation of hardness and elastic modulus of those thin films under varied loads.Hardness of SiO2 a... |
| Keywords: | thin film plasma enhanced chemical vapor deposition(PECVD) silicon oxide silicon nitride nanohardness elastic modulus |
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