| PETEOS氧化硅膜的成分与电荷特性 |
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| 引用本文： | 许春芳,范焕章.PETEOS氧化硅膜的成分与电荷特性[J].华东师范大学学报(自然科学版),1996(3):59-62. |
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| 作者姓名： | 许春芳 范焕章 |
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| 作者单位： | 华东师范大学电子系 |
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| 摘 要： | 本文分析了以正硅酸乙酯溶液为源，用等离子体增强化学汽相沉积法淀积的氧化硅膜的成分与电荷等特性，以及淀积和退火工艺条件对这些特性的影响。
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| 关 键 词： | 介质膜 VLSI 氧化硅膜 PETEOS 化学汽相淀积 |
The Composition and Charge Properities of PETEOS Silicon Dioxide Films |
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| Xu Chunfang,Fan Huanzhang, He Xihua, Wang Guangning.The Composition and Charge Properities of PETEOS Silicon Dioxide Films[J].Journal of East China Normal University(Natural Science),1996(3):59-62. |
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| Authors: | Xu Chunfang Fan Huanzhang He Xihua Wang Guangning |
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| Abstract: | The Composition and charge properities of PETEOS silicon dioxide films deposited with tetraethoxysilane (TEOS) as liquid source are analysed, also, the effects of deposition and annealing conditions on these properities are discussed. |
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| Keywords: | vary large scale integrated circuit dielectric film plasma enhanced chemical vapor deposition |
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