首页 | 本学科首页   官方微博 | 高级检索  
     检索      

结晶硅材料的单脉冲和多脉冲激光损伤研究
引用本文:沈中华,陈建平,等.结晶硅材料的单脉冲和多脉冲激光损伤研究[J].南京大学学报(自然科学版),2001,37(1):79-83.
作者姓名:沈中华  陈建平
作者单位:[1]南京大学近代声学国家重点实验室,南京210093 [2]南京理工大学应用物理系,南京210094
基金项目:Supported by the Postdoctoral Foundstion of Nanjing University
摘    要:对半导体材料硅的单脉冲和多脉冲激光损伤现象进行研究,实验结果表明多脉冲激光辐照的损伤阈值比单脉冲的少,且多脉冲激光损伤阈值是与脉冲重复频率相关的,随脉冲重复频率增大而减少,说明损伤过程中累积效应的存在。根据实验结果和理论计算,我们指出热积累并不是损伤阈值降低的唯一原因,并对可能的损伤机理进行了讨论。

关 键 词:激光损伤    单脉冲  多脉冲  结晶硅  半导体材料

Damage Phenomena Induced by a Single Laser Pulse and Multiple Laser Pulses in Crystal Silicon
Shen Zhonghua,Chen Jianping,Lu Jian,Ni Xiaowu,Zhang Shuyi.Damage Phenomena Induced by a Single Laser Pulse and Multiple Laser Pulses in Crystal Silicon[J].Journal of Nanjing University: Nat Sci Ed,2001,37(1):79-83.
Authors:Shen Zhonghua  Chen Jianping  Lu Jian  Ni Xiaowu  Zhang Shuyi
Abstract:The damage effects in silicon induced by single pulse and multiple pulses of a Nd: YAG laser with different RPF are presented. The damage phenomena demonstrate that the multiply damage belongs to PRF-dependent damage. We have also discussed the possible mechanisms of the damage induced by multiple laser pulses involving the contributions from thermal accumulation as well as micro-defect accumulation.
Keywords:laser-induced damage  silicon  single pulse  mnltiple pulses
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号