| MFS和MFOS结构的C－V特性研究 |
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| 引用本文： | 于军,周文利,曹广军,谢基凡.MFS和MFOS结构的C－V特性研究[J].华中科技大学学报(自然科学版),1996(1). |
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| 作者姓名： | 于军 周文利 曹广军 谢基凡 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 基金项目： | 国家863高科技计划资助 |
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| 摘 要： | 采用ＳＯＬ－ＧＥＬ方法分别在Ｓｉ和含有ＳｉＯ２的衬底上制备出ＰＺＴ铁电薄膜，并获得了ＭＦＳ和ＭＦＯＳ结构．利用ＭＯＳ结构常用的Ｃ－Ｖ特性分析方法，对ＭＦＳ和ＭＦＯＳ结构进行了高频Ｃ－Ｖ特性测试分析，研究了Ｆ／（Ｏ）Ｓ的界面特性，结果表明，金属／ＰＺＴ／ＳｉＯ２／Ｓｉ的ＭＦＯＳ结构具有较低的界面态，可实现极化存储，并可望制成铁电场效应晶体管．
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| 关 键 词： | 铁电场效应晶体管 MFOS结构 C－V特性 极化存储 |
On the C-V Characteristics of the MFS and MFOS Structures |
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| Yu Jun, Zhou Wenli,Cao Guangjun, Xie Jifan.On the C-V Characteristics of the MFS and MFOS Structures[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1996(1). |
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| Authors: | Yu Jun Zhou Wenli Cao Guangjun Xie Jifan |
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| Institution: | Yu Jun; Zhou Wenli;Cao Guangjun; Xie Jifan |
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| Abstract: | MFOS structures were obtained with the PZT film prepared directly by the SOL-GELmethod on st substrates or on those with SiO2 content,By making a C-V hysteresis analysis,the simplest and most common means to study the M-O-S structure,the interface properties of the F/(O)S structure of metal/PZT/SiO2 were studied. Experimental results show that the MFOS structure of metal/PZT/SiO2/is in lower interface state and capable of achieving polarization induced memorization and hopefully of forming FFET. |
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| Keywords: | s: ferroelectric-field-effect transistor MFOS structure C-V characteristic polarizationinduced memorization |
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