| 具有双n+发射区的MCT |
| |
| 引用本文： | 周宝霞,陈治明.具有双n+发射区的MCT[J].西安理工大学学报,1999,15(4):39-41,55. |
| |
| 作者姓名： | 周宝霞 陈治明 |
| |
| 作者单位： | 西安理工大学自动化与信息工程学院,陕西,西安,710048 |
| |
| 摘 要： | 提出一种新型的MOS控制晶闸管结构DNMCT器件。该器件同MCT相比减弱了寄生JFET效应，并利用PISCES-IIB器件模拟软件验证DNMCT具有较好的正向导通电流-电压特性。该结构在一定程度上可缓解器件开关速度与导通压降之间的矛盾。
|
| 关 键 词： | 发射极 MOS控制晶闸管 功率半导体管件 MCT |
MCT-With Double n+ Emitter |
| |
| ZHOU Bao-xia,CHEN Zhi-ming.MCT-With Double n+ Emitter[J].Journal of Xi'an University of Technology,1999,15(4):39-41,55. |
| |
| Authors: | ZHOU Bao-xia CHEN Zhi-ming |
| |
| Abstract: | A new type of device structure of MOS controlling thyristor known as DNMCT is presented in this paper. In comparison with MCT, this new device can weaken the parasitic JFET effect. PISCES IIB is employed to simulate the properties of DNMCT, thus indicating that it is characterized by the better positive turn on current voltage, and that the new structure can reduce the contradition between the switching speed and the turn on voltage drop to some certain extent. |
| |
| Keywords: | emitter MOS controlling thyristor |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
