| CsC_8的能带结构 |
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| 引用本文： | 过建清,陆栋.CsC_8的能带结构[J].应用科学学报,1991(2). |
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| 作者姓名： | 过建清 陆栋 |
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| 作者单位： | 复旦大学
(过建清)，复旦大学(陆栋) |
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| 基金项目： | 国家自然科学基金资助课题 |
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| 摘 要： | 用Ohno,Nakao和Kamimura的方法计算了石墨插层化合物CsC_8的能带结构.表明Cs的6S能带底位于费密能级以上3.6eV处。所以,铯原子层的价电子全部转移到石墨碳原子层的反键π能带.所得结果与其他计算结果相符.
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| 关 键 词： | 能带 石墨插层化合物 |
ENERGY BAND STRUCTURES OF C_3C_8 |
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| Guo JIANQING Lu DONG.ENERGY BAND STRUCTURES OF C_3C_8[J].Journal of Applied Sciences,1991(2). |
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| Authors: | Guo JIANQING Lu DONG |
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| Institution: | Fudan University |
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| Abstract: | The band structures of cesium graphite intercalation compound CsC8 is calculated with the method put forward by Ohno, Nakao and Kamimura. The band bottom of 6S electrons of cesium lies 3.6eV above the Fermi level. Hence all the valence electrons of the cesium atom layer transfer to the antibonding at band of graphite carbon layers. The obtained band structure is in good agreement with that of other calculations. |
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| Keywords: | energy band graphite intercalation compound |
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