| Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响 |
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| 引用本文： | 张旭,赵庆勋,李晓红,刘保亭.Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响[J].河北大学学报(自然科学版),2010,30(1). |
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| 作者姓名： | 张旭 赵庆勋 李晓红 刘保亭 |
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| 作者单位： | 河北大学,物理科学与技术学院,河北,保定,071002 |
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| 基金项目： | 河北省自然科学基金资助项目(E2008000620;E2009000207;08B010;E2009000210) |
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| 摘 要： | 利用磁控溅射法,在Si(100)衬底上制备了不同厚度的非晶导电薄膜Ni-Al底电极,并采用直滴法、退火工艺和掩膜技术,首先制备了偏氟乙烯-三氟乙烯P(VDF-TrFE)共聚物铁电薄膜,并构架了Al/P(VDF-TrFE)/Ni-Al/Si铁电电容器异质结.采用X线衍射仪(XRD)、铁电测试仪(Precision LC unit)等测试手段对薄膜的性能进行了表征.结果表明:Ni-Al薄膜厚度对偏氟乙烯-三氟乙烯共聚物薄膜的漏电流产生较大影响,当厚度为36 nm时,其漏电流密度达到2.09×10-5A/cm2;所构架的Al/P(VDF-TrFE)/Ni-Al/Si电容器呈现2种漏电机理,在较低的电场范围内,电容器的导电机理为欧姆导电机理,在高电场下为界面肖特基导电机理.
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| 关 键 词： | 偏氟乙烯-三氟乙烯 漏电流 Ni-Al |
Effect of Ni-Al Bottom Electrode on Ferroelectric Properties of Poly Vinylidene Fluoride with Trifluoroethylene Copolymer Films |
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| ZHANG Xu,ZHAO Qing-xun,LI Xiao-hong,LIU Bao-ting.Effect of Ni-Al Bottom Electrode on Ferroelectric Properties of Poly Vinylidene Fluoride with Trifluoroethylene Copolymer Films[J].Journal of Hebei University (Natural Science Edition),2010,30(1). |
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| Authors: | ZHANG Xu ZHAO Qing-xun LI Xiao-hong LIU Bao-ting |
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| Institution: | College of Physics Science and Technology;Hebei University;Baoding 071002;China |
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| Abstract: | Ni-Al films with different thicknesses used as the bottom electrode layers are prepared on Si(100) at room temperature by magnetron sputtering method,and P(VDF-TrFE) copolymer film is prepared by direct dripping method,which is followed by an annealing process to further obtain Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor heterostructures through a shadow mask.Various techniques,such as X-ray diffraction(XRD),ferroelectric tester(Precision LC unit) have been employed to characterize the microstructure a... |
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| Keywords: | Ni-Al P(VDF-TrFE) leakage current Ni-Al |
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