电子束蒸发制备的ZnS薄膜的物相结构和光学性能

用电子束蒸发法在不同衬底温度下制备了厚度为100nm左右的ZnS薄膜,利用X射线衍射(XRD)、紫外—可见光分光光度计(UV-vis Spectrophotometer)研究了ZnS薄膜的晶体结构、光学性能,分析了衬底温度对ZnS薄膜结构与光学特性的影响.结果表明:不同衬底温度下制备的ZnS薄膜均具有闪锌矿结构(111)面择优取向生长的特征;衬底温度为200℃时制备的ZnS薄膜的(111)晶面衍射峰最强,半高宽最小,晶粒最大;制备的ZnS薄膜对可见光有良好的透过性,由于量子尺寸效应,电子束蒸发制备的ZnS薄膜光学带隙大于ZnS粉末的带隙.

Effects of Substrate Temperature on Phase Structure and Photoelectric Properties of ZnS Thin Films Deposited by Electron-beam Evaporation

The 100 nm ZnS thin films were deposited by electron-beam evaporation on soda-lime glass substrates at different substrate temperatures.The phase structure,and the optical properties of the films were characterized by X-ray diffractometer,UV-vis spectrophotometer.The results showed that the films exhibited polycrystalline sphalerite structure regardless of the substrate temperatures.With the increase of substrate temperatures,the films showed a higher degree of （111） preferred orientation and larger grain size.However,the trend turned to the opposite when the temperature was over 200 ℃.The film deposited at 200 ℃ shows the best crystallinity.All the films have a high transmissivity of visible light.Due to the quantum size effect,the band gaps of the ZnS films are bigger than that of ZnS powder.