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反常弛豫的CuCI(110)表面电子态研究
引用本文:徐小树,胡行,姚乾凯,魏英耐,贾瑜.反常弛豫的CuCI(110)表面电子态研究[J].郑州大学学报(理学版),2000,32(4):37-42.
作者姓名:徐小树  胡行  姚乾凯  魏英耐  贾瑜
作者单位:1. 河南教育学院物理系,郑州 450003
2. 郑州大学物理工程学院,郑州 450052
基金项目:河南省教委和河南省科委自然科学基金资助的课题.
摘    要:采用考虑d电子相互作用的spd紧束缚模型描述具有闪矿结构的半导体CuCl的体能带,用形势散射理论方法计算了弛豫的CuCl(110)表面电子结构,给出了表面投影能带结构和表面波矢分辨的层态密度.计算结果表明表面弛豫主要是表面层p-p和p-d的重新杂化而引起的.

关 键 词:紧束缚模型  散射理论  弛豫  投影能带结构  态密度(110)表面
文章编号:1001-8212(2000)04-0037-06
修稿时间:2000年7月10日

Influence of Relaxation on Surface El ectronic States of CuCl (110)
XU Xiao-shu,YAO Qian-kai,WEI Ying-nai,JlA Yu,HU Xing.Influence of Relaxation on Surface El ectronic States of CuCl (110)[J].Journal of Zhengzhou University:Natural Science Edition,2000,32(4):37-42.
Authors:XU Xiao-shu  YAO Qian-kai  WEI Ying-nai  JlA Yu  HU Xing
Abstract:The results of a theoretical study of the electronic structure of CuCl (110) surface are presented. The bulk electronic structure is described by the nearest-neighbor tight-binding formalism which proposed by Ferhat etc. Using the scattering-theoretic method, we have obtained the surface projected band structure together with the wavevector-resolved surface densities of states. The results show that the rehybridization between p-p and p-d electrons in the top two layers plays an important role in the relaxation.
Keywords:tight-binding model  scattering-theoretic method  surface projected band structure  densities of states  relaxation  CuCl (110) surface
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