| GaN金属-半导体-金属紫外光电探测器的研制 |
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| 引用本文： | 陈小红,蔡加法,程翔,邓彩玲,陈松岩.GaN金属-半导体-金属紫外光电探测器的研制[J].厦门大学学报(自然科学版),2007,46(1):47-50. |
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| 作者姓名： | 陈小红 蔡加法 程翔 邓彩玲 陈松岩 |
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| 作者单位： | 1. 厦门大学物理学系,福建,厦门,361005
2. 厦门大学机电工程系,福建,厦门,361005 |
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| 摘 要： | 用金属有机物化学汽相沉积(MOCVD)方法在蓝宝石衬底上制备了GaN单晶薄膜,并对样品进行X射线衍射和光致发光谱测量.利用GaN样品成功地制备了金属-半导体-金属(MSM)结构GaN紫外光电探测器,并对其I-V特性、光谱响应及击穿电压等性能进行测试和分析.结果表明,探测器在-5 V偏压下的光电流与暗电流之比大于400倍;探测器光响应在352 nm附近达到响应峰值,并在364 nm附近出现截止,即具备可见盲特性;器件的光响应度最好达0.21A/W.
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| 关 键 词： | 金属-半导体-金属(MSM)结构 紫外探测器 |
| 文章编号： | 0438-0479(2007)01-0047-04 |
| 修稿时间： | 04 18 2006 12:00AM |
The Research and Fabrication of GaN Metal-semiconductor-metal Photodetector |
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| CHEN Xiao-hong,CAI Jia-fa,CHENG Xiang,DENG Cai-ling,CHEN Song-yan.The Research and Fabrication of GaN Metal-semiconductor-metal Photodetector[J].Journal of Xiamen University(Natural Science),2007,46(1):47-50. |
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| Authors: | CHEN Xiao-hong CAI Jia-fa CHENG Xiang DENG Cai-ling CHEN Song-yan |
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| Institution: | 1. Dept. of Phys. , Xiamen Univ, ,2. Dept. of Mechanical and Electrical Engineering , Xiamen Univ, ,Xiamen 361005, China |
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| Abstract: | The GaN epilayers were grown by metal organic chemical vapor deposition(MOCVD) method.X-ray diffraction and photoluminescence technique were used to study the quality of our GaN films.The GaN UV photodetectors with MSM structure were fabicated.The I-V characteristic and UV photoresponsivity of the detectors were also investigated.The results show that the radio of photocurrent to dark current is greater than 400,detectors show a peak at about 352 nm,and show a cutoff for wavelength longer than 364 nm,i.e.the detectors have the visble-blind characteristic.The responsitivity of our device reach 0.21 A/W. |
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| Keywords: | GaN |
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