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Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion
引用本文:刘祖明 SouleymaneKTraore 张忠文 罗毅. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion[J]. 清华大学学报, 2004, 9(2): 242-245
作者姓名:刘祖明 SouleymaneKTraore 张忠文 罗毅
作者单位:[1]SolarEnergyResearchInstitute,YunnanProvincialRenewableEnergyEngineeringKeyLaboratory,YunnanNormalUniversity,Kunming650092,China [2]DepartmentofElectronicEngineering,TsinghuaUniversity,Beijing100084,China
摘    要:The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystaUine silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime‘s minority carriers are increased greatly after such treatment.

关 键 词:重磷扩散 多晶硅 多孔硅 太阳能电池 多晶吸气 颗粒边界钝化 光电能

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion
LIU Zuming,Souleymane K Traore,ZHANG Zhongwen,LUO Yi, Solar Energy Research Institute,Yunnan Provincial Renewable Energy Engineering Key Laboratory,Yunnan Normal University,Kunming ,China. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion[J]. Tsinghua Science and Technology, 2004, 9(2): 242-245
Authors:LIU Zuming  Souleymane K Traore  ZHANG Zhongwen  LUO Yi   Solar Energy Research Institute  Yunnan Provincial Renewable Energy Engineering Key Laboratory  Yunnan Normal University  Kunming   China
Affiliation:LIU Zuming,Souleymane K Traore,ZHANG Zhongwen,LUO Yi,** Solar Energy Research Institute,Yunnan Provincial Renewable Energy Engineering Key Laboratory,Yunnan Normal University,Kunming 650092,China, Department of Electronic Engineering,Tsinghua University,Beijing 100084,China
Abstract:
Keywords:polycrystalline gettering  grain boundaries passivation  porous silicon  heavy phosphorous diffusion
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