GaN球形量子点中类氢杂质态的二次斯塔克效应

在有效质量近似下,利用微扰-变分法研究了GaN球形量子点中类氢杂质态的二次斯塔克效应.计算了杂质态结合能随量子点半径和外加电场强度的变化关系.数值结果表明,随量子点尺寸和外加电场强度的增加,基态能和结合能均单调降低.此外,随着量子点半径的增大,斯塔克效应变得越来越明显.结果还表明在同一外电场下,球形量子点中杂质态的斯塔克能移较无杂质时导带电子的斯塔克能移小.

Second-order Stark Effect of a Hydrogenic Impurity in a Spherical GaN Quantum Dot

The Second-order quantum-confined Stark effect of a shallow hydrogenic impurity in a spherical GaN quantum dot is discussed within the effective-mass approximation by using a perturbation-variation method. The binding energies are calculated as a function of the structure size and the intensity of an applied electric field. Numerical results show that both of the ground state energy and binding energy decrease monotonously with the increase of the quantum dot size and applied electric field. Moreover, the Stark effect becomes more and more obvious as the quantum dot size increases. It is also found that the Stark energy shift of the impurity state is smaller than that of a conduction electron in a spherical quantum dot without an impurity under the same electric field.