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SmCo(Al,Si)/Cr硬磁薄膜的结构与性能
引用本文:王翔,李佐宜,林更琪,蔡长波.SmCo(Al,Si)/Cr硬磁薄膜的结构与性能[J].华中科技大学学报(自然科学版),2001,29(2):22-24.
作者姓名:王翔  李佐宜  林更琪  蔡长波
作者单位:华中科技大学电子科学与技术系
基金项目:国防预研基金重点资助项目 !,教育部高等学校博士点专项科研基金资助项目,教育部薄膜与微细技术开放实验室基金资助项目
摘    要:在优化后的磁控溅射和退火条件下 ,制备SmCo(Al,Si) /Cr硬盘磁记录介质及硬磁薄膜 .实验结果表明 ,Sm摩尔分数为 31.6 % ,Cr缓冲层为 6 6nm ,Sm(Co ,Al,Si) 5磁性层为 30nm时 ,制得的Sm(Co ,Al,Si) 5/Cr薄膜的矫顽力Hc 为 187.8kA/m ,剩磁比S =Mr/Ms≈ 0 .94;在 5 0 0℃保温 2 5min退火后 ,矫顽力Hc 达10 42 .5kA/m ,剩磁比S≈ 0 .92 ,从而制成了较理想的硬磁薄膜

关 键 词:硬磁薄膜  矫顽力  磁控溅射
文章编号:1000-8616(2001)02-0022-03
修稿时间:2000年6月22日

Microstructure and Properties of SmCo(Al,Si)/Cr Permanent in Magnetic Thin Films
Wang Xiang,Li Zuoyi,Lin Gengqi,CAI Changbo.Microstructure and Properties of SmCo(Al,Si)/Cr Permanent in Magnetic Thin Films[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,2001,29(2):22-24.
Authors:Wang Xiang  Li Zuoyi  Lin Gengqi  CAI Changbo
Abstract:Sm(Co,Al,Si)/Cr films have been prepared as one kind of promising materials for the longitudinal recording media and permanent magnetic thin film under the optimal conditions of magnetron sputtering and annealing. The result reveals that when Sm content, Cr underlayer thickness and the thickness of Sm(Co,Al,Si)5 magnetic thin film are 31.6 % atm, 66 nm and 33 nm respectively, the Sm(Co,Al,Si)5/Cr thin films have been fabricated with coercivity up to 187.8 kA/m, quareness ratio S=Mr/Ms near 0.94, after being annealed at 500 ℃ for 25 minutes, the films with coercivity Hc up to 1 042.5 kA/m and squareness ratio S about 0.92 are obtained.
Keywords:permanent thin film  coercivity  magnetron sputtering
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