| 平面高反压器件的优化设计与工艺分析 |
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| 引用本文： | 邓蓓,包宗明.平面高反压器件的优化设计与工艺分析[J].应用科学学报,1990,8(1):91-94. |
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| 作者姓名： | 邓蓓 包宗明 |
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| 作者单位： | 复旦大学 |
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| 摘 要： | 本文用有限差分法解两维泊松方程,分析了在带有场限制环的平面高反压器件的制作中,硅表面不同的正电荷对最优环间距和击穿电压的影响及在掩膜间距不变的情况下击穿电压对衬底掺杂浓度和结深的灵敏性.这些结果对实际工艺生产有指导意义.
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| 关 键 词： | 电压 高反压器件 优化 平面 硅 |
| 收稿时间： | 1987-06-18 |
| 修稿时间： | 1987-11-16 |
OPTIMAL DESIGN AND MANUFACTURE ANALYSIS OF HIGH-VOLTAGE PLANAR DEVICES |
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| DENG BEI,BAO ZONGMING.OPTIMAL DESIGN AND MANUFACTURE ANALYSIS OF HIGH-VOLTAGE PLANAR DEVICES[J].Journal of Applied Sciences,1990,8(1):91-94. |
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| Authors: | DENG BEI BAO ZONGMING |
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| Institution: | Fudan University |
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| Abstract: | This paper presents a numerical analysis of high-voltage planar silicon devices having field limiting rings. The two-dimensional Poisson equation is solved by using the finite difference method. The effects of surface charges, substrate impurity concentration and junction depth are described. Methods of overcomingthese influ ences in optimal design are put forward. Strict control of junction depth in manufacture is a very important key for guaranteeing the high-voltage capability. |
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