| 氧化钇稳定的氧化锆上外延硅生长的研究 |
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| 引用本文： | 陈庆贵,史日华.氧化钇稳定的氧化锆上外延硅生长的研究[J].应用科学学报,1990,8(3):268-270. |
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| 作者姓名： | 陈庆贵 史日华 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 绝缘衬底上高质量亚微米厚硅单晶膜的获得对于制成高速度、高集成度、低功能和抗辐射的集成电路十分重要.蓝宝石上外延硅膜的生长和其CMOS/SOS集成电路的研究已为国内外学者所重视.
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| 关 键 词： | 硅单晶膜 氧化锆 氧化钇 外延生长 |
| 收稿时间： | 1988-10-04 |
| 修稿时间： | 1989-02-18 |
STUDIES OF EPITAXIAL GROWTH OF SILICON ON YTTRIA-STABILIZED ZIRCONIA |
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| CHEN QINGGUI,SHI RIHUA.STUDIES OF EPITAXIAL GROWTH OF SILICON ON YTTRIA-STABILIZED ZIRCONIA[J].Journal of Applied Sciences,1990,8(3):268-270. |
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| Authors: | CHEN QINGGUI SHI RIHUA |
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| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | Using the prolysis of SiH4, the epitaxial growth of silicon films on yttria-stabilized, cubic zirconia substrate has been investigated. The results indicate that high temperature annealing prior to epitaxial growth is necessary ior obtaining single crystalline silicon films. The annealing temperature of predeposition is above 1250℃ for 120 min. Using TEM and AES to analyze the films, it is shown that the single crystalline silicon films are good and have high resistivity. |
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