首页 | 本学科首页   官方微博 | 高级检索  
     检索      

多量子阱自电光效应器件及其负阻特性
引用本文:陈弘达,吴荣汉.多量子阱自电光效应器件及其负阻特性[J].天津大学学报(自然科学与工程技术版),1998,31(2):211-214.
作者姓名:陈弘达  吴荣汉
作者单位:[1]天津大学精密仪器与光电子工程学院 [2]中国科学院半导体研究所
摘    要:研究了GaAs/AlGaAs多量子阱结构的电场光调制特性,测量了光反射谱、光电流谱和光电流电压特性。结果表明,在I-V特性中存在光电流负微分电阻区,由这种多量子阱材料制备的自电光效应器件(SEED)观察到明显的量子限制Stark效应。

关 键 词:室温激子  多量子阱  SEED器件  电光效应器件

MULTIPLE QUANTUM WELL SELF ELECTRO OPTIC EFFECT DEVICES AND THE FEATURE OF NEGATIVE DIFFERENTIAL PHOTOCONDUCTANCE
Chen,Hongda,Zhang,Yimo,Guo,Weilian.MULTIPLE QUANTUM WELL SELF ELECTRO OPTIC EFFECT DEVICES AND THE FEATURE OF NEGATIVE DIFFERENTIAL PHOTOCONDUCTANCE[J].Journal of Tianjin University(Science and Technology),1998,31(2):211-214.
Authors:Chen  Hongda  Zhang  Yimo  Guo  Weilian
Abstract:We have investigated the electric field optical modulation of GaAs/AlGaAs multiple quantum well(MQW).Reflectivity,photocurrent spectroscopy and photocurrent voltage characteristics have been measured.The I V curve shows the feature of negative differential photoconductance.We have successfully fabricated the self electro optic effect devices(SEEDs)based on the MQW p i n structure and observe the obvious quantum confined Stark effect(QCSE)caused by room exciton absorption.
Keywords:room  exciton  absorption  multiple  quantum  well  SEED
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号