H2/(Ar+H2)流量比对AZO薄膜结构及光电性能的影响

在Ar+H2气氛下,用RF磁控溅射法在室温下制备Al掺杂的ZnO(AZO)薄膜,研究H2/(Ar+H2)流量比对薄膜结构和光电性能的影响。结果表明,在沉积气氛中引入H2可以提高AZO薄膜的结晶质量,降低AZO薄膜的电阻率,提高其霍尔迁移率和载流子浓度;H2/(Ar+H2)流量比为5%时,AZO薄膜的最小电阻率为1.58×10-3Ω.cm,最大霍尔迁移率和载流子浓度分别为13.17cm2.(V.s)-1和3.01×1020 cm-3;AZO薄膜在可见光范围内平均透光率大于85.7%。

Effect of H2/(Ar+H2) flux ratio on structure and optical-electrical properties of AZO thin films

Al-doped ZnO thin films(AZO) were deposited in Ar+H2 atmosphere by RF magnetron sputtering at room temperature.The effect of H2/(Ar+H2) flux ratio on structure and optical-electrical properties of AZO films were investigated with XRD,SEM,Hall effect instrument,and UV visible spectrophotometer.The results show that H2 introduction into deposition atmosphere can improve the crystallite quality of the AZO films,greatly reduce the electrical resistivity and improve Hall mobility and carrier concentration of the films.When H2/(Ar+H2) flux ratio is 5%,deposited AZO film has the minimum resistivity of 1.58×10-3 Ω·cm with Hall mobility at 13.17 cm2 V-1 s-1 and carrier concentration at 3.01×1020 cm-3,and its average transmittance in the visible light range is over 85.7%.The results suggest that AZO films deposited in Ar+H2 atmosphere at room temperature are suitable for application in solar cells and organic light emitting diodes as transparent conductive electrode layers.